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ERD09-15

Description
Rectifier Diode, 1 Element, 3A, 1500V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

ERD09-15 Overview

Rectifier Diode, 1 Element, 3A, 1500V V(RRM),

ERD09-15 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
Maximum non-repetitive peak forward current70 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.6 µs
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
ERD09-13---ERD09-15
FAST RECOVERY RECT IFIER
VOLT AGE RANGE: 1300 --- 1500 V
CURRENT : 3.0 A
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries
U/L
recognition
94V -0
DO - 27
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECT RICAL CHARACTERIST ICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
ERD09 -13
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
ERD09 -15
1500
1050
1500
3.0
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
1300
910
1300
Peak f orw ard surge current
8.3ms s ingle half -sine-w ave
superimposed on rated load
@T
J
=125
I
F SM
70.0
A
Maximum instantaneous f orw ard voltage
at 3.0 A
Maximum revers e current
at rated DC blocking v oltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.5
10.0
200.0
600
32
22
-55----+150
-55----+150
V
A
ns
pF
/W
Maximum revers e recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
N OTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C .
3. Therm al resistance f rom junction to am bient.
www.galaxycn.com
Document Number 0261060
BL
GALAXY ELECTRICAL
1.

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