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MURF2030CT

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size58KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet View All

MURF2030CT Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AB

R
MURF2030CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 300 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
JF
MURF2030CT
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
0.177(4.50)
Component in accordance to RoHS 2011
/
65
/
EU
0.138(3.50)
0.056(1.43)
0.043(1.10)
0.410(10.41)
0.390(9.91)
ITO-220AB
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.272(6.90)
0.256(6.50)
0.187(4.75)
0.167(4.25)
0.130(3.31)
0.111(2.81)
1
PIN
2
3
1.161(29.5)
1.083(27.5)
0.110(2.80)
0.551(14.00)
0.512(13.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
0.029(0.73)
0.019(0.47)
0.104(2.64)
0.096(2.44)
0.029(0.73)
0.019(0.47)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Per leg
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum average forward
rectified current(see Fig.1)
Maximum instantaneous forward
voltage at 10.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
T
A
=25
°
C
T
A
=125
°
C
MURF
2030CT
300
210
300
10.0
20.0
150.0
150
1
.
2
0
.
95
10
TYP.
20
35
2.5
-65 to+175
-65 to+175
MAX.
50
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
JC
V
olts
V
olts
V
olts
A
mps
A
mps
V
olts
μA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
T
J
T
STG
Notes:
1. Pulse test: 300 s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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