• Wide power supply operating range from 3.0V to 5.5V
• Available QML Q or V processes
• 14-lead flatpack
• UT54ACS00E-SMD- 5962-96512
• UT54ACTS00E-SMD- 5962-96513
DESCRIPTION
The UT54ACS00E and the UT54ACTS00E are quadruple,
two-input NAND gates. The circuits perform the Boolean func-
tions Y = A⋅B or Y = A + B in positive logic.
The device is characterized over full military temperature range
of -55°C to +125°C.
LOGIC SYMBOL
(1)
(2)
(4)
(5)
(9)
(10)
(12)
(13)
(11)
(6)
(8)
Y2
Y3
Y4
A1
B1
A2
B2
A3
B3
A4
B4
&
(3)
Y1
FUNCTION TABLE
INPUTS
A
H
L
X
B
H
X
L
OUTPUT
Y
L
H
H
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
LOGIC DIAGRAM
PINOUT
14-Lead Flatpack
TopView
A1
B1
Y1
A2
B2
Y2
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
B4
A4
Y4
B3
A3
Y3
A1
B1
A2
B2
A3
B3
A4
B4
Y1
Y2
Y3
Y4
36-00-04-005
Ver. 1.0.0
1
Aeroflex Microelectronics Solutions - HiRel
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
108
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D2
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum package power dissipation
permitted @ T
C
= +125
o
C
LIMIT
-0.3 to 7.0
-0.3 to V
DD
+0.3
-65 to +150
+175
+300
15 for ACS
15.5 for ACTS
±10
3.2
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2. Per MIL-STD-883, method 1012.1, Section 3.4.1, P
D
= (T
J(max)
- T
C(max)
) /
Θ
JC
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
36-00-04-005
Ver. 1.0.0
2
Aeroflex Microelectronics Solutions - HiRel
DC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS00E
7
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
6
; -55°C < T
C
< +125°C)
SYMBOL
V
IL
V
IH
I
IN
V
OL1
V
OH2
I
OS1
DESCRIPTION
Low-level input voltage
1
High-level input voltage
1
Input leakage current
Low-level output voltage
3
High-level output voltage
3
Short-circuit output current
2 ,4
CONDITION
V
DD
from 3.0V to 5.5V
V
DD
from 3.0V to 5.5V
V
IN
= V
DD
or V
SS
I
OL
= 100μA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
DD
from 4.5V to 5.5V
I
OS2
Short-circuit output current
2 ,4
V
O
= V
DD
and V
SS
V
DD
from 3.0V to 3.6V
I
OL1
Low level output current
10
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 4.5V to 5.5V
I
OL2
Low level output current
10
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
DD
from 3.0V to 3.6V
I
OH1
High level output current
10
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
V
DD
from 4.5V to 5.5V
I
OH2
High level output current
10
V
IN
= V
DD
or V
SS
V
OH
= V
DD
-0.4V
V
DD
from 3.0V to 3.6V
P
total1
Power dissipation
2, 8, 9
C
L
= 50pF
V
DD
= 4.5V to 5.5V
P
total2
Power dissipation
2, 8, 9
C
L
= 50pF
V
DD
= 3.0V to 3.6V
I
DDQ
C
IN
Quiescent Supply Current
Input capacitance
5
Output capacitance
5
V
DD
=5.5V
ƒ
= 1MHz
V
DD
= 0V
C
OUT
ƒ
= 1MHz
V
DD
= 0V
15
pF
25
15
0.5
1.0
mW/
MHz
mW/
MHz
μA
pF
-6
mA
-8
mA
+6
mA
+8
mA
-100
+100
mA
V
DD
- 0.25
-200
+200
0.7V
DD
-1
1
0.25
MIN
MAX
0.3V
DD
UNIT
V
V
μA
V
V
mA
36-00-04-005
Ver. 1.0.0
Aeroflex Microelectronics Solutions - HiRel
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5
amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 method 1019 condition
A up to the maximum TID level procured.
8. Power dissipation specified per switching output.
9. Power does not include power contribution of any TTL output sink current.
10. Guaranteed by characterization, but not tested.
36-00-04-005
Ver. 1.0.0
4
Aeroflex Microelectronics Solutions - HiRel
AC ELECTRICAL CHARACTERISTICS FOR THE UT54ACS00E
2
( V
DD
= 3.0V to 5.5V; V
SS
= 0V
1
; -55°C < T
C
< +125°C)
SYMBOL
t
PLH
PARAMETER
Input to Yn
CONDITION
C
L
= 50pF
V
DD
4.5V to 5.5V
3.0V to 3.6V
t
PHL
Input to Yn
C
L
= 50pF
4.5V to 5.5V
3.0V to 3.6V
MINIMUM
1
1
1
1
MAXIMUM
6
8
7
9
ns
UNIT
ns
Notes:
1. Maximum allowable relative shift equals 50mV.
2. For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883 method 1019 condition
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