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BD676

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size348KB,8 Pages
ManufacturerNorth American Philips Discrete Products Div
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BD676 Overview

Transistor,

BD676 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz

BD676 Related Products

BD676 BD684 BD680 BD682
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknow unknown unknown unknown
Maximum collector current (IC) 4 A 4 A 4 A 4 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750 750
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz 10 MHz
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