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2N709

Description
RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-18,
CategoryDiscrete semiconductor    The transistor   
File Size42KB,1 Pages
ManufacturerCrimson Semiconductor Inc.
Download Datasheet Parametric View All

2N709 Overview

RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN, TO-18,

2N709 Parametric

Parameter NameAttribute value
MakerCrimson Semiconductor Inc.
Reach Compliance Codeunknow
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage6 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
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