OM12P10ST datasheet, PDF - EEWORLD Datasheet

OM12P10ST: DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,; CategoryDiscrete semiconductor The transistor; File Size260KB，6 Pages; ManufacturerOmnirel Corp.

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OM12P10ST Overview

Power Field-Effect Transistor, 12A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Omnirel Corp.
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.34 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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