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GC1713D

Description
Variable Capacitance Diode, 10pF C(T), 60V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

GC1713D Overview

Variable Capacitance Diode, 10pF C(T), 60V, Silicon, Abrupt

GC1713D Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-CEMW-N2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio7
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor950
Maximum repetitive peak reverse voltage60 V
Maximum reverse current2e-8 µA
Reverse test voltage55 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
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