MV1410A datasheet, PDF - EEWORLD Datasheet

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MV1410A: DescriptionVariable Capacitance Diode, 22pF C(T), 12V, Silicon, Hyperabrupt; CategoryDiscrete semiconductor diode; File Size51KB，1 Pages; ManufacturerMsi Electronics Inc

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MV1410A Overview

Variable Capacitance Diode, 22pF C(T), 12V, Silicon, Hyperabrupt

MV1410A Parametric

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage	12 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	10
Nominal diode capacitance	22 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	200
Maximum repetitive peak reverse voltage	12 V
Maximum reverse current	1e-8 µA
Reverse test voltage	10 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Varactor Diode Classification	HYPERABRUPT

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Maker	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc	Msi Electronics Inc
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE	3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	10%	5%	10%	10%	10%	10%	5%	10%
Minimum diode capacitance ratio	10	10	10	10	14	10	10	10
Nominal diode capacitance	22 pF	360 pF	175 pF	250 pF	550 pF	100 pF	100 pF	15 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	200	200	200	200	200	200	200	200
Maximum repetitive peak reverse voltage	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V
Maximum reverse current	1e-8 µA	1e-8 µA	1e-8 µA	1e-8 µA	1e-8 µA	1e-8 µA	0.01 µA	1e-8 µA
Reverse test voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT

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