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MV1401A

Description
Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size51KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric Compare View All

MV1401A Overview

Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt

MV1401A Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other features3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage12 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio14
Nominal diode capacitance550 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage12 V
Maximum reverse current1e-8 µA
Reverse test voltage10 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationHYPERABRUPT

MV1401A Related Products

MV1401A MV1402B MV1403A MV1405A MV1410A MV1406A MV1406B MV1411A
Description Variable Capacitance Diode, 550pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 360pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 175pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 250pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 22pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 100pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 100pF C(T), 12V, Silicon, Hyperabrupt Variable Capacitance Diode, 15pF C(T), 12V, Silicon, Hyperabrupt
Maker Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc Msi Electronics Inc
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE 3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 10% 5% 10% 10% 10% 10% 5% 10%
Minimum diode capacitance ratio 14 10 10 10 10 10 10 10
Nominal diode capacitance 550 pF 360 pF 175 pF 250 pF 22 pF 100 pF 100 pF 15 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
minimum quality factor 200 200 200 200 200 200 200 200
Maximum repetitive peak reverse voltage 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
Maximum reverse current 1e-8 µA 1e-8 µA 1e-8 µA 1e-8 µA 1e-8 µA 1e-8 µA 0.01 µA 1e-8 µA
Reverse test voltage 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Varactor Diode Classification HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT
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