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SMCJ-65601EV-25MH

Description
Standard SRAM, 1MX1, 25ns, CMOS, CDIP32, 0.400 INCH, SIDEBRAZED, DIP-32
Categorystorage    storage   
File Size36KB,2 Pages
ManufacturerMatra MHS
Download Datasheet Parametric View All

SMCJ-65601EV-25MH Overview

Standard SRAM, 1MX1, 25ns, CMOS, CDIP32, 0.400 INCH, SIDEBRAZED, DIP-32

SMCJ-65601EV-25MH Parametric

Parameter NameAttribute value
MakerMatra MHS
Parts packaging codeDIP
package instructionDIP,
Contacts32
Reach Compliance Codeunknow
ECCN code3A001.A.2.C
Maximum access time25 ns
JESD-30 codeR-CDIP-T32
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of ports1
Number of terminals32
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1MX1
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Minimum standby current2 V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal locationDUAL
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