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AT29LV020-25JC

Description
2 Megabit 256K x 8 3-volt Only CMOS Flash Memory
Categorystorage    storage   
File Size148KB,10 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric Compare View All

AT29LV020-25JC Overview

2 Megabit 256K x 8 3-volt Only CMOS Flash Memory

AT29LV020-25JC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeQFJ
package instructionPLASTIC, MS-016AE, LCC-32
Contacts32
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time250 ns
startup blockBOTTOM/TOP
command user interfaceNO
Data pollingYES
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density2097152 bi
Memory IC TypeFLASH
memory width8
Humidity sensitivity level2
Number of functions1
Number of departments/size1K
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.556 mm
Department size256
Maximum standby current0.00004 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width11.43 mm
Maximum write cycle time (tWC)20 ms
AT29LV020
Features
Single Voltage, Range 3V to 3.6V Supply
3-Volt-Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 200 ns
Low Power Dissipation
15 mA Active Current
20
µA
CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Two 8 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
2 Megabit
(256K x 8)
3-volt Only
CMOS Flash
Memory
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 54 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 20
µA.
The device endurance is such that any sector can typically be written
to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV020 does not require
high input voltages for programming. Five-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
AT29LV020
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
(continued)
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
PLCC Top View
TSOP Top View
Type 1
0565A
4-73

AT29LV020-25JC Related Products

AT29LV020-25JC AT29LV020 AT29LV020-20 AT29LV020-25 AT29LV020-20TC AT29LV020-20TI AT29LV020-25TI
Description 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory 2 Megabit 256K x 8 3-volt Only CMOS Flash Memory
Is it Rohs certified? incompatible - - - incompatible incompatible incompatible
Maker Atmel (Microchip) - - - Atmel (Microchip) Atmel (Microchip) Atmel (Microchip)
Parts packaging code QFJ - - - TSOP1 TSOP1 TSOP1
package instruction PLASTIC, MS-016AE, LCC-32 - - - 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
Contacts 32 - - - 32 32 32
Reach Compliance Code compli - - - compli compli compli
ECCN code EAR99 - - - EAR99 EAR99 EAR99
Maximum access time 250 ns - - - 200 ns 200 ns 250 ns
startup block BOTTOM/TOP - - - BOTTOM/TOP BOTTOM/TOP BOTTOM/TOP
command user interface NO - - - NO NO NO
Data polling YES - - - YES YES YES
JESD-30 code R-PQCC-J32 - - - R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609 code e0 - - - e0 e0 e0
length 13.97 mm - - - 18.4 mm 18.4 mm 18.4 mm
memory density 2097152 bi - - - 2097152 bi 2097152 bi 2097152 bi
Memory IC Type FLASH - - - FLASH FLASH FLASH
memory width 8 - - - 8 8 8
Humidity sensitivity level 2 - - - 3 3 3
Number of functions 1 - - - 1 1 1
Number of departments/size 1K - - - 1K 1K 1K
Number of terminals 32 - - - 32 32 32
word count 262144 words - - - 262144 words 262144 words 262144 words
character code 256000 - - - 256000 256000 256000
Operating mode ASYNCHRONOUS - - - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C - - - 70 °C 85 °C 85 °C
organize 256KX8 - - - 256KX8 256KX8 256KX8
Output characteristics 3-STATE - - - 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QCCJ - - - TSOP1 TSOP1 TSOP1
Encapsulate equivalent code LDCC32,.5X.6 - - - TSSOP32,.8,20 TSSOP32,.8,20 TSSOP32,.8,20
Package shape RECTANGULAR - - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER - - - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL - - - PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 - - - 240 240 240
power supply 3.3 V - - - 3.3 V 3.3 V 3.3 V
Programming voltage 3 V - - - 3 V 3 V 3 V
Certification status Not Qualified - - - Not Qualified Not Qualified Not Qualified
Maximum seat height 3.556 mm - - - 1.2 mm 1.2 mm 1.2 mm
Department size 256 - - - 256 256 256
Maximum standby current 0.00004 A - - - 0.00004 A 0.00005 A 0.00005 A
Maximum slew rate 0.015 mA - - - 0.015 mA 0.015 mA 0.015 mA
Maximum supply voltage (Vsup) 3.6 V - - - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - - - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - - - 3.3 V 3.3 V 3.3 V
surface mount YES - - - YES YES YES
technology CMOS - - - CMOS CMOS CMOS
Temperature level COMMERCIAL - - - COMMERCIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) - - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form J BEND - - - GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm - - - 0.5 mm 0.5 mm 0.5 mm
Terminal location QUAD - - - DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 - - - 30 30 30
switch bit YES - - - YES YES YES
type NOR TYPE - - - NOR TYPE NOR TYPE NOR TYPE
width 11.43 mm - - - 8 mm 8 mm 8 mm
Maximum write cycle time (tWC) 20 ms - - - 20 ms 20 ms 20 ms
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