AT29LV020-25 datasheet, PDF - EEWORLD Datasheet

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AT29LV020-25: Description2 Megabit 256K x 8 3-volt Only CMOS Flash Memory; File Size148KB，10 Pages; ManufacturerAtmel (Microchip)

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AT29LV020-25 Overview

2 Megabit 256K x 8 3-volt Only CMOS Flash Memory

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AT29LV020

Features

•

Single Voltage, Range 3V to 3.6V Supply

3-Volt-Only Read and Write Operation

Software Protected Programming

Fast Read Access Time - 200 ns

Low Power Dissipation

15 mA Active Current

µA

CMOS Standby Current

Sector Program Operation

Single Cycle Reprogram (Erase and Program)

1024 Sectors (256 bytes/sector)

Internal Address and Data Latches for 256-Bytes

Two 8 KB Boot Blocks with Lockout

Fast Sector Program Cycle Time - 20 ms

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

2 Megabit

(256K x 8)

3-volt Only

CMOS Flash

Memory

Description

The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read

only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 54 mW over the commer-

cial temperature range. When the device is deselected, the CMOS standby current is

less than 20

µA.

The device endurance is such that any sector can typically be written

to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV020 does not require

high input voltages for programming. Five-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

AT29LV020

Pin Configurations

Pin Name

A0 - A17

Function

Addresses

Chip Enable

Output Enable

Write Enable

(continued)

I/O0 - I/O7 Data Inputs/Outputs

No Connect

PLCC Top View

TSOP Top View

Type 1

0565A

4-73

AT29LV020-25 Related Products

	AT29LV020-25	AT29LV020	AT29LV020-20	AT29LV020-20TC	AT29LV020-20TI	AT29LV020-25JC	AT29LV020-25TI
Description	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory
Is it Rohs certified?	-	-	-	incompatible	incompatible	incompatible	incompatible
Maker	-	-	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	-	-	-	TSOP1	TSOP1	QFJ	TSOP1
package instruction	-	-	-	8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32	8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32	PLASTIC, MS-016AE, LCC-32	8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
Contacts	-	-	-	32	32	32	32
Reach Compliance Code	-	-	-	compli	compli	compli	compli
ECCN code	-	-	-	EAR99	EAR99	EAR99	EAR99
Maximum access time	-	-	-	200 ns	200 ns	250 ns	250 ns
startup block	-	-	-	BOTTOM/TOP	BOTTOM/TOP	BOTTOM/TOP	BOTTOM/TOP
command user interface	-	-	-	NO	NO	NO	NO
Data polling	-	-	-	YES	YES	YES	YES
JESD-30 code	-	-	-	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32
JESD-609 code	-	-	-	e0	e0	e0	e0
length	-	-	-	18.4 mm	18.4 mm	13.97 mm	18.4 mm
memory density	-	-	-	2097152 bi	2097152 bi	2097152 bi	2097152 bi
Memory IC Type	-	-	-	FLASH	FLASH	FLASH	FLASH
memory width	-	-	-	8	8	8	8
Humidity sensitivity level	-	-	-	3	3	2	3
Number of functions	-	-	-	1	1	1	1
Number of departments/size	-	-	-	1K	1K	1K	1K
Number of terminals	-	-	-	32	32	32	32
word count	-	-	-	262144 words	262144 words	262144 words	262144 words
character code	-	-	-	256000	256000	256000	256000
Operating mode	-	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	-	-	70 °C	85 °C	70 °C	85 °C
organize	-	-	-	256KX8	256KX8	256KX8	256KX8
Output characteristics	-	-	-	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	-	TSOP1	TSOP1	QCCJ	TSOP1
Encapsulate equivalent code	-	-	-	TSSOP32,.8,20	TSSOP32,.8,20	LDCC32,.5X.6	TSSOP32,.8,20
Package shape	-	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	-	-	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	-	-	240	240	225	240
power supply	-	-	-	3.3 V	3.3 V	3.3 V	3.3 V
Programming voltage	-	-	-	3 V	3 V	3 V	3 V
Certification status	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	-	1.2 mm	1.2 mm	3.556 mm	1.2 mm
Department size	-	-	-	256	256	256	256
Maximum standby current	-	-	-	0.00004 A	0.00005 A	0.00004 A	0.00005 A
Maximum slew rate	-	-	-	0.015 mA	0.015 mA	0.015 mA	0.015 mA
Maximum supply voltage (Vsup)	-	-	-	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	-	-	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	-	-	-	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	-	-	-	YES	YES	YES	YES
technology	-	-	-	CMOS	CMOS	CMOS	CMOS
Temperature level	-	-	-	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	-	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	-	-	GULL WING	GULL WING	J BEND	GULL WING
Terminal pitch	-	-	-	0.5 mm	0.5 mm	1.27 mm	0.5 mm
Terminal location	-	-	-	DUAL	DUAL	QUAD	DUAL
Maximum time at peak reflow temperature	-	-	-	30	30	30	30
switch bit	-	-	-	YES	YES	YES	YES
type	-	-	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	-	-	-	8 mm	8 mm	11.43 mm	8 mm
Maximum write cycle time (tWC)	-	-	-	20 ms	20 ms	20 ms	20 ms

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