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RGP10M

Description
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size115KB,1 Pages
ManufacturerInternational Semiconductor Inc
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RGP10M Overview

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

RGP10M Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
Parts packaging codeDO-41
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Description Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, PLASTIC, A-405, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AP, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, PLASTIC, A-405, 2 PIN Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, PLASTIC, A-405, 2 PIN
Maker International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc International Semiconductor Inc
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow unknow unknow unknow
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 E-LALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum output current 1 A 1 A 3 A 3 A 3 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY GLASS GLASS GLASS GLASS PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ELLIPTICAL ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 50 V 600 V 1000 V 200 V 800 V 600 V 800 V 400 V 600 V
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
package instruction PLASTIC PACKAGE-2 O-PALF-W2 O-LALF-W2 O-LALF-W2 - E-LALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Contacts 2 2 - - - 2 2 2 2 2
ECCN code EAR99 EAR99 - - - EAR99 EAR99 EAR99 EAR99 EAR99
Maximum forward voltage (VF) 1.3 V - 1.2 V 1.3 V 1 V 1.2 V 1.3 V 1.3 V - -
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C 200 °C 175 °C 175 °C - -
Maximum reverse recovery time 0.5 µs 0.15 µs 2 µs 2 µs - 2 µs 0.25 µs 0.25 µs 0.15 µs 0.25 µs
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