Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Hi-Tron Semiconductor Corp |
| Parts packaging code | TO-5 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 0.02 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 55 |
| JEDEC-95 code | TO-5 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.125 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 20 MHz |
| 2N337 | 2N1149 | 2N1150 | 2N1154 | 2N117 | 2N118 | 2N335 | 2N338 | |
|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp |
| Parts packaging code | TO-5 | TO-22 | TO-22 | TO-22 | TO-22 | TO-22 | TO-5 | TO-5 |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| Maximum collector current (IC) | 0.02 A | 0.025 A | 0.025 A | 0.06 A | 0.025 A | 0.025 A | 0.025 A | 0.02 A |
| Configuration | Single | Single | Single | Single | Single | Single | Single | Single |
| Minimum DC current gain (hFE) | 55 | 13 | 24 | 19 | 15 | 29 | 36 | 80 |
| JESD-30 code | O-MBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 175 °C | 175 °C | 150 °C | 175 °C | 175 °C | 175 °C | 150 °C |
| Package body material | METAL | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | METAL | METAL |
| Package shape | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.125 W | 0.15 W | 0.15 W | 0.75 W | 0.15 W | 0.15 W | 0.15 W | 0.125 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 20 MHz | 12 MHz | 13 MHz | 1 MHz | 4 MHz | 5 MHz | 6 MHz | 30 MHz |
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