2N998 datasheet, PDF - EEWORLD Datasheet

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2N998: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, PNP, Silicon, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size105KB，1 Pages; ManufacturerHi-Tron Semiconductor Corp

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2N998 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, PNP, Silicon, TO-18, TO-18, 3 PIN

2N998 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hi-Tron Semiconductor Corp
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	20 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	2
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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LOW-POWER SILICON PNP

Item

Number

Part Number

Manufacturer

V(BR)CEO

hFE

(V)

Ie

Max

(A)

fT

(Hz)

C

obo

Max

(F)

leBO

Max

(A)

V(BR)CBO

(V)

PD

Max

(W)

Derate

at

(WrC)

Toper

Max

eC)

Package

Style

V(BR)CEO

MPS5142

MPS5143

2N998

2N3677

2N2411

2N1991

PN5143

2N5143

2N2802

2N2803

2N2tsU4

2N2412

MMT75

2N1623

2N2862

2N5242

2N330

2N726

2N3978

>=

20 V,

(Cont'd)

Motorola

See Index

~ee In~ex

5

10

15

20

~~~g;~

25

2N3051

PN5142

2N5142

BFT62

BC250

BC260

BC250A

30

~g~~g~

35

BC260A

2N978

HSE301

2N3341

2N2805

2N2806

2N2807

OC201

40

See Index

Motorola

See Index

Space Power

Genrl Diode

Diode Trails

See Index

::;ee Inaex

See Index

Semelab

NthAmerSemi

See Index

NthAmerSemi

~cro

Elecs

ITTSemilntr

NthAmerSemi

See Index

Hybrid Semi

See Index

SemiconTech

~tnAmerseml

f":!'t",.

20

2U

20

1.0

2

4.0

10

15

20

2U

20

25

30

500m

100m

500m

30m

aum

100m

200m

50m

100m

500m

50m

100m

100M

5.0M

140M

40M

100M

60M

tsUM

140M

300k

45M

170M

.50M

140M

1.0M

45p

10p

5.0p

45p

8.0p

5.0p

70p

6p

15p

5p

14p

t:'·\?P

8.0p

10p

8.0p

6.0p

4.0p

45p

6p

8.0p

10p

4.0p

8.0p

12p

30p

6p

4.0p

10p

12p

7.0p

?.t.Jp

0.7p

5.0p

5p

6.0p

SOn

5.0u

1.0n

10n

5.0u

SOn

10n

100n

1.0u

.01u

.10u

1.0u

1.0n

20

30

25

30

20

25

30

50

25

20

25

20

40

20

~~

625m

300m

400m

300m

600m

625m

200m

250m

300m

225m

250m

300m

500m

337m

300m

400m

~g

20

~g

30

35

38

40

~gg~

100m

500m

1.0

100m

gg~

60M

100M

60M

100

180M

~g~

10n

SOn

2.5u

100n

.10u

.1\?U

.10u

5.0u

100n

.01u

10n

.50u

~~

~~g~

250m

625m

300m

800m

200m

300m

5.0m

2.6m

2.3m

1.7m

4.8m

5.0m

2.0m

1.6m

1.7m

2.0m

1.8m

1.7m

5.0m

2.5m

2.0m

2.3m

1.tsm

1.6m

5.0m

3.0m

4.5m

2.0m

3.0m

;;j.\?m

3.0m

2.0m

2.6m

1.5m

2.7m

1.6m

1.8m

1.6m

2.0m

2.8m

800u

2.5m

625u

1.7m

2.3m

2.0m

2.5m

150 J

135 J

175S

175 J

175J

150 S

125 J

175 S

TO·92

TO·18

TO-46

TO·18

TO·5

TO·92

TO·106

TO·77

~j~~

135 J

150 J

175 S

125 S

150 J

175J

175S

1I:'S

175S

175 S

150 S

150 J

175 A

125 J

~g:~~

TO·224AA

TO·5

TO·18

TO· 105

TO·105

N/A

TO·18

TO·48

~g:~~

TO·89

TO·92

TO·105

TO·39

TO·92

TO·18

TO·92

~g

20

~~

~gg~

100m

30m

50m

~gg~

180M

65.M

10M

50M

60M

3.2M

~g

20

30

25

40

~gg~

300m

330m

150m

400m

250m

~~~

j

175 J

150 J

125 J

175 A

175S

175 S

150 J

+g:~~

TO·18

TO·106var

TO·46

TO·77

Can

lian

TO·226

TO·18

TO·92

Radial

SOT·89

TO·18

MicroTO·92

TO·18

TO·92var

TO·92

TO·237AA

TO·18

TO·92

¥~:~;5

45

50

A170

BC352

BC352A

BC352B

BC352L

MT0413

MT200

2SA1022

2N2861

BC200

2SA559

2N4290

C055

C055P

BC370

NA12EX

MT0411

2N727

K9015

BC376

2SA598

BC328·10

KM905

~~~~~R

55

60

~~~~~~

65

70

~~~~~D

75

80

JE9012D

2SA1128

2N2945A

BC200·01

JE9012E

BC250B

BC260B

BC200Y

2SB831

BCX69

NA12FG

JE9012F

2N2945

2N3794

~g~~~~

85

90

SprgueElec

Powerex Inc

See Index

Motorola

Micro Elecs

Matsushita

See Index

Micro Elecs

See Index

NthAmerSemi

Elec Trans

See Index

Semi Inc

NthAmerSemi

Natl Semi

",atl ::;eml

Natl Semi

Micro Elecs

See Index

Semi Inc

Advncd Semi

PhilipsElec

Micro Elecs

See Index

Semi Inc

Acivncd Semi

NEC Corp JA

NECElecslnc

Matsushita

See Index

PhilipsElec

NEC Corp JA

NECElecslnc

See Index

Semelab

NthAmer5eml

Semi Ltd

Micro Elecs

Hitachi Ltd

See Index

Natl Semi

NEC Corp JA

NECElecslnc

See Index

~emlconTech

~g

20

:g

40

50

58

~g~

100m

30m

50m

100m

200m

500m

·1

1.0

J.~~

100M

125M

30M

90M

150M

.tsUM

90M

60M

130M

100M

120M

150M

200M

2gg~

100n

50n

100n

.01u

100n

SOOn

20n

1.0u

1.\?U

1.0u

10n

1.0u

100n

1.0n

100n

~~

~gg~

300m

350m

100m

50m

200m

337m

50m

300m

50m

350m

250m

800m

750m

375m

600m

~~g

j

175

150

125

J

20

30

20

25

20

30

20

25

20

25

·25

75

~~g

j

175 S

125 J

175J

150 J

~rC~OTO.92

~g

20

2U

20

~g

60

63

64

tg

~gg~

30M

140M

50M

150M

180M

120M

12UM

150M

10M

90M

180M

60M

90M

65M

200M

10M

~~

~gg~

100m

300m

625m

500m

625m

500m

:,uum

625m

600m

400m

50m

625m

300m

800m

50m

150m

800m

625m

400m

250m

400m

900m

200m

625m

350m

800u

2.0m

~~g

j

150 J

175 J

175J

125 S

150 J

135 J

175 S

125 J

150 J

125 J

175 J

175

J

125 J

150

175

125

J

+g:~~

Radial

TO·18

TO·92

:

50m

100m

1.0

800m

·.5

5.4m

5.0m

2.3m

62u

5.0m

3.0m

2.0m

625u

6.4m

5.0m

4.3m

2.0m

2.2m

5.0m

..

:'

9.0p

!:I.up

200n

10p

2.0u

100m

200n

100n

.10u

10u

1.0u

200n

.20n

500n

SOOn

50n

200n

40

25

20

40

20

64

65

70

75

78

80

~g

20

gg

~~~gg~

95

2SB739

BC205

JE9012G

BC586

Motorola

Hitachi Ltd

See Index

NECElecslnc

NEC

Co~

JA

Advncd emi

~g

20

85

96

100

110

118

120

500m

100m

50m

500m

100m

1.5

50m

700m

1.0

500m

100m

500m

SOOm

600m

2.0

500m

100m

~g:~~

TO·92

TO·48

MlcroTO·92

TO·92

TO·18

4.0p

~g

20

25

40

25

40

~g:~~

MicroTO·92

TO·92

SOT·89

TO·92

TO-46

TO·92var

31p

7.0p

10p

15p

4.0p

80M

160M

~~

25

40

g~j

125

150 J

+g:~g~~

TO·92

TO·108

TO·92

744

2N998 Related Products

	2N998	2N2945A	2N3677	2N726
Description	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, PNP, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-46, TO-46, 3 PIN	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Hi-Tron Semiconductor Corp	Hi-Tron Semiconductor Corp	Hi-Tron Semiconductor Corp	Hi-Tron Semiconductor Corp
Parts packaging code	BCY	TO-46	TO-46	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.5 A	0.1 A	0.1 A	0.05 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V
Configuration	DARLINGTON	Single	Single	Single
Minimum DC current gain (hFE)	2	70	4	30
JEDEC-95 code	TO-18	TO-46	TO-46	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	1.8 W	0.4 W	0.4 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
ECCN code	-	EAR99	EAR99	EAR99
Number of components	-	1	1	1
Nominal transition frequency (fT)	-	10 MHz	5 MHz	140 MHz

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