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Datasheet> All Categories > Discrete semiconductor> diode> FM3100-MHT-H
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FM3100-MHT-H

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size93KB，7 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric Compare View All

FM3100-MHT-H Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,

FM3100-MHT-H Parametric

Parameter NameAttribute value
MakerFORMOSA
package instructionR-PDSO-F2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage100 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL

FM3100-MHT-H Preview

Formosa MS
FM320-MHT THRU FM3100-MHT
Chip Schottky Barrier Rectifier
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2010/05/10
Revised Date
2011/11/15
Revision
B
Page.
7
Page 1
DS-12163O
Formosa MS
FM320-MHT THRU FM3100-MHT
Chip Schottky Barrier Rectifier
3.0A Surface Mount Schottky Barrier
Rectifiers - 20V-100V
Features
•
Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FM320-MHT-H.
Package outline
SOD-123HT
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.039(1.0)
0.024(0.6)
0.004(0.10)Typ.
0.083(2.1)
0.031(0.8) Typ.
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123HT
•
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
0.075(1.9)
0.024(0.6)Typ.
0.051(1.3)
0.043(1.1)
0.032(0.8)
0.028(0.6)
0.047(1.2)
0.039(1.0)
0.0335(0.85)
0.0296(0.75)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
0.047(1.2)
0.039(1.0)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
R
θJA
R
θJC
C
J
T
STG
-65
70
35
160
+175
MIN.
TYP.
MAX.
3.0
50
0.2
10
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100
O
C
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
mA
O
O
C/W
C/W
pF
O
C
SYMBOLS
FM320-MHT
FM330-MHT
FM340-MHT
FM350-MHT
FM360-MHT
FM380-MHT
FM3100-MHT
*1
V
RRM
(V)
20
30
40
50
60
80
100
V
RMS
*2
(V)
14
21
28
35
42
56
70
*3
V
R
(V)
20
30
40
50
60
80
100
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
-55 to +125
0.55
*2 RMS voltage
*3 Continuous reverse voltage
0.70
-55 to +150
0.85
*4 Maximum forward voltage@I
F
=3.0A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2010/05/10
Revised Date
2011/11/15
Revision
B
Page.
7
Page 2
DS-12163O
Rating and characteristic curves (FM320-MHT THRU FM3100-MHT)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
3.0
2.5
FM
FM
50
35
INSTANTANEOUS FORWARD CURRENT,(A)
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
LEAD TEMPERATURE,(°C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
32
0-M
~
HT
FM
34
20V ~ 40V
0-M
M3
~F
HT
10
0-M
HT
HT
10
3.0
1.0
50V ~ 60V
120
0-M
80V ~ 100V
140
160
180
200
0.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
PEAK FORWARD SURGE CURRENT,(A)
40
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLTAGE,(V)
20
10
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
100
CHARACTERISTICS
20V~40V
50V~100V
NUMBER OF CYCLES AT 60Hz
10
FIG.4-TYPICAL JUNCTION CAPACITANCE
700
600
500
400
300
200
100
0
REVERSE LEAKAGE CURRENT, (mA)
JUNCTION CAPACITANCE,(pF)
1.0
T
J
=100°C
0.1
T
J
=25°C
0.01
.01
.05
.1
.5
1
5
10
50
100
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2010/05/10
Revised Date
2011/11/15
Revision
B
Page.
7
Page 3
DS-12163O
Formosa MS
FM320-MHT THRU FM3100-MHT
Chip Schottky Barrier Rectifier
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Symbol
1
2
1
2
Marking
Type number
FM320-MHT
FM330-MHT
FM340-MHT
FM350-MHT
FM360-MHT
FM380-MHT
FM3100-MHT
Marking code
32
33
34
35
36
38
310
Suggested solder pad layout
SOD-123HT
0.036 (0.90)
0.044 (1.10)
0.048 (1.20)
0.075 (1.90)
0.036 (0.90)
0.028 (0.70)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2010/05/10
Revised Date
2011/11/15
Revision
B
Page.
7
Page 4
DS-12163O
Formosa MS
FM320-MHT THRU FM3100-MHT
Chip Schottky Barrier Rectifier
Packing information
P
0
P
1
d
E
F
B
W
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SOD-123HT
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
-
-
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2010/05/10
Revised Date
2011/11/15
Revision
B
Page.
7
Page 5
DS-12163O
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FM3100-MHT-H Related Products

FM3100-MHT-H FM320-MHT-H FM320-MHT FM330-MHT FM330-MHT-H FM340-MHT FM340-MHT-H FM360-MHT FM360-MHT-H FM3100-MHT
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,
Maker FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
package instruction R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.55 V 0.55 V 0.55 V 0.55 V 0.55 V 0.55 V 0.7 V 0.7 V 0.85 V
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 100 V 20 V 20 V 30 V 30 V 40 V 40 V 60 V 60 V 100 V
Maximum reverse current 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA 200 µA
surface mount YES YES YES YES YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL

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