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5KP85A

Description
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size86KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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5KP85A Overview

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

5KP85A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Breakdown voltage nominal value99.2 V
Maximum clamping voltage137 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage85 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
5KP5.0A thru 5KP188A
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• P600 glass passivated chip junction
• Available in uni-directional polarity only
• 5000 W peak pulse power capability with
a 10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
P600
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
V
BR
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
5.0 V to 188 V
6.4 V to 231 V
5000 W
8.0 W
500 A
175 °C
Uni-directional
P600
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)
Instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
5000
See next table
8.0
600
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 20-Nov-12
Document Number: 88308
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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