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10DF2

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size23KB,2 Pages
ManufacturerETC
Download Datasheet View All

10DF2 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

FRD
Type :
10DF2
FEATURES
* Miniature Size
* Super Fast Recovery
* Low Forward Voltage drop
* Low Power Loss, High Efficiency
* High Surge Capability
* 100 Volts thru 600 Volts Types Available
* 52mm Inside Tape Spacing Package Available
OUTLINE DRAWING
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
40
1.0
Approx Net Weight:0.33g
10DF2
200
300
Ta=25°C
50Hz Half Sine
Wave Resistive Load
Unit
V
V
A
A
A
°C
°C
1.57
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
Symbol
I
RM
V
FM
trr
Rth(j-a)
Conditions
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 1.0A
Ta= 25°C, I
F
=I
R
=10mA
Junction to Ambient
Min. Typ. Max.
-
-
-
-
-
-
5
1.05
200
115
Unit
µA
V
ns
°C/W
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