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HGTM24N60D1

Description
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size149KB,4 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric Compare View All

HGTM24N60D1 Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AA

HGTM24N60D1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)40 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)600 ns
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage25 V
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Maximum off time (toff)900 ns
Nominal off time (toff)700 ns
Nominal on time (ton)100 ns
VCEsat-Max2.3 V

HGTM24N60D1 Related Products

HGTM24N60D1
Description Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AA
Is it Rohs certified? incompatible
Maker Harris
package instruction FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow
Shell connection COLLECTOR
Maximum collector current (IC) 40 A
Collector-emitter maximum voltage 600 V
Configuration SINGLE
Maximum landing time (tf) 600 ns
Gate emitter threshold voltage maximum 6 V
Gate-emitter maximum voltage 25 V
JEDEC-95 code TO-204AA
JESD-30 code O-MBFM-P2
JESD-609 code e0
Number of components 1
Number of terminals 2
Maximum operating temperature 150 °C
Package body material METAL
Package shape ROUND
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power consumption environment 125 W
Maximum power dissipation(Abs) 125 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form PIN/PEG
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications MOTOR CONTROL
Transistor component materials SILICON
Maximum off time (toff) 900 ns
Nominal off time (toff) 700 ns
Nominal on time (ton) 100 ns
VCEsat-Max 2.3 V
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