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HC6856/1SBRZC

Description
Standard SRAM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
Categorystorage    storage   
File Size743KB,12 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric View All

HC6856/1SBRZC Overview

Standard SRAM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28

HC6856/1SBRZC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHoneywell
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codeunknow
ECCN code3A001.A.2.C
Maximum access time40 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T28
JESD-609 codee0
length35.56 mm
memory density262144 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height4.445 mm
Maximum standby current0.0004 A
Minimum standby current2.5 V
Maximum slew rate0.0075 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
total dose200k Rad(Si) V
width15.24 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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