HYB3165160AT-40 datasheet, PDF

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HYB3165160AT-40: DescriptionFast Page DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50; Categorystorage storage; File Size217KB，26 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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HYB3165160AT-40 Overview

Fast Page DRAM, 4MX16, 40ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50

HYB3165160AT-40 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	TSOP2
package instruction	0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
Contacts	50
Reach Compliance Code	_compli
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	40 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G50
JESD-609 code	e0
length	20.95 mm
memory density	67108864 bi
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	NO
Maximum standby current	0.0005 A
Maximum slew rate	0.155 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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4M x 16-Bit Dynamic RAM

( 8k, 4k & 2k Refresh)

HYB 3164160AT(L) -40/-50/-60

HYB 3165160AT(L) -40/-50/-60

HYB 3166160AT(L) -40/-50/-60

Advanced Information

•

4 194 304 words by 16-bit organization

0 to 70 °C operating temperature

Fast Page Mode operation

Performance:

-40

RAC

CAC

RAS access time

CAS access time

Access time from address

Read/write cycle time

Fast page mode cycle time

-50

-60

110

•

Single + 3.3 V (± 0.3V) power supply

Low power dissipation:

-40

HYB3166160AT(L)

HYB3165160AT(L)

HYB3164160AT(L)

900

756

612

-50

558

468

378

-60

396

324

270

•

7.2 mW standby (TTL)

3.24 mW standby (MOS)

720

µW

standby for L-version

Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh (L-version only)

2 CAS / 1 WE byte control

8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)

4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)

2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)

256 msec refresh period for L-versions

Plastic Package:

P-TSOPII-50 400 mil

Semiconductor Group

6.97

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