BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD245 Series
80 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
q
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
C
2
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD246
Collector-emitter voltage (R
BE
= 100
Ω)
BD246A
BD246B
BD246C
BD246
Collector-emitter voltage (I
C
= -30 mA)
BD246A
BD246B
BD246C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
3
62.5
-65 to +150
-65 to +150
250
UNIT
V
CER
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD246
V
(BR)CEO
I
C
= -30 mA
(see Note 5)
V
CE
= -55 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -115 V
I
CEO
I
EBO
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-0.3 A
-2.5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-3 A
-3 A
-3 A
(see Notes 5 and 6)
40
20
4
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
-1
-4
-1.6
-3
V
V
I
B
= 0
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
BD246/246A
BD246B/246C
MIN
-45
-60
-80
-100
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
I
C
= -10 A
I
C
= -10 A
I
C
= -10 A
I
C
= -0.5 A
I
C
= -0.5 A
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.56
42
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -1 A
V
BE(off)
= 3.7 V
I
B(on)
= -0.1 A
R
L
= 20
Ω
†
MIN
I
B(off)
= 0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.2
0.8
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS634AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS634AB
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
I
C
= -10 A
-1·0
h
FE
- DC Current Gain
100
10
-0·1
1
-0·1
-1·0
I
C
- Collector Current - A
-10
-0·01
-0·01
-0·1
-1·0
-10
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
V
CE
= -4 V
T
C
= 25 °C
V
BE
- Base-Emitter Voltage - V
-1·4
TCS634AC
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
I
C
- Collector Current - A
-10
Figure 3.
PRODUCT
INFORMATION
3
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AC
I
C
- Collector Current - A
-10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
-1·0
-0·1
BD246
BD246A
BD246B
BD246C
-10
-100
-1000
-0·01
-1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
P
tot
- Maximum Power Dissipation - W
TIS633AA
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT
INFORMATION
5
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