BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
50 W at 25°C Case Temperature
4 A Continuous Collector Current
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDT61
Collector-base voltage (I
E
= 0)
BDT61A
BDT61B
BDT61C
BDT61
Collector-emitter voltage (I
B
= 0)
BDT61A
BDT61B
BDT61C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
60
80
100
120
60
80
100
120
5
4
0.1
50
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDT61
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 3)
BDT61A
BDT61B
BDT61C
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
EBO
h
FE
V
CE(sat)
V
BE(on)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
5V
3V
6 mA
3V
1.5 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 1.5 A
I
C
= 1.5 A
I
C
= 1.5 A
I
B
= 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
2.5
2.5
2
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDT61
BDT61A
BDT61B
BDT61C
BDT61
BDT61A
BDT61B
BDT61C
BDT61
BDT61A
BDT61B
BDT61C
MIN
60
80
100
120
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 2 A
V
BE(off)
= -5 V
I
B(on)
= 8 mA
R
L
= 20
Ω
†
MIN
I
B(off)
= -8 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
4.5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
20000
10000
h
FE
- Typical DC Current Gain
TCS110AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
1·5
TCS110AB
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
0·5
1·0
I
C
- Collector Current - A
5·0
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
5·0
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS110AC
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
5·0
Figure 3.
PRODUCT
INFORMATION
3
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS110AB
I
C
- Collector Current - A
1·0
0·1
BDT61
BDT61A
BDT61B
BDT61C
0.01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
60
P
tot
- Maximum Power Dissipation - W
TIS110AA
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
京公网安备 11010802033920号
EEWORLD
