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AT49F080T-12TC

Description
8-Megabit 1M x 8 5-volt Only Flash Memory
Categorystorage    storage   
File Size70KB,12 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

AT49F080T-12TC Overview

8-Megabit 1M x 8 5-volt Only Flash Memory

AT49F080T-12TC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeTSOP
package instructionPLASTIC, TSOP-40
Contacts40
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time120 ns
Other featuresHARDWARE DATA PROTECTION; BYTE PROGRAMMABLE
startup blockTOP
command user interfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G40
JESD-609 codee0
length18.4 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,1
Number of terminals40
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP40,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,1008K
Maximum standby current0.0001 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width10 mm
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 90 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 10
µs/Byte
Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100
µA
CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F080 is a 5-volt-only in-system Flash Memory device. Its 8-megabits of
memory is organized as 1,024,576 words by 8-bits. Manufactured with Atmel’s
advanced nonvolatile CMOS technology, the device offers access times to 90 ns with
power dissipation of just 275 mW over the commercial temperature range. When the
device is deselected, the CMOS standby current is less than 100
µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F080 locates the boot block at lowest order
addresses (“bottom boot”); the AT49F080T locates it at highest order addresses (“top
boot”).
8-Megabit
(1M x 8)
5-volt Only
Flash
Memory
AT49F080
AT49F080T
AT49F080/080T
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
Data Inputs/Outputs
No Connect
CBGA Top View
1
2
3
4
5
6
7
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A3
A2
A1
A0
I/O0
I/O1
I/O2
I/O3
GND
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SOIC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
(continued)
VCC
CE
A12
A13
A14
A15
A16
A17
A18
A19
NC
NC
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
TSOP Top VIew
Type 1
A
A5
B
A4
C
A6
D
A3 I/O1 NC VCC I/O4 I/O7 NC
E
A2
F
A1 I/O0 I/O2 GND I/O5 RY/BY WE
A0 I/O3 GND I/O6 OE NC
A9 RST CE A14 A16 A19
A7 A10 VCC A13 NC A18
A8 A11 NC A12 A15 A17
A19
A17
A15
A13
CE
A18
A16
A14
A12
4
6
8
10
12
14
16
1
3
5
7
9
11
13
15
2
40
38
36
34
32
30
28
26
39
37
35
33
31
29
27
NC
OE
I/O7
I/O5
VCC
GND
I/O2
I/O0
A1
A3
NC
WE
RDY/BUSY
I/O6
I/O4
GND
I/O3
I/O1
A0
A2
VCC
NC
RESET
A11
A10
A9 A8
A7
A5
A6
A4
18 17
20 19
25
24 23
22 21
0584B-A–8/97
1
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