INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK600
DESCRIPTION
·Drain
Current
–I
D
= 25A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 60V(Min)
·Fast
Switching Speed
APPLICATIONS
·High
speed power switching
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
60
±20
25
75
150
-55~150
UNIT
V
V
A
W
℃
℃
isc website：www.iscsemi.cn
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isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(
th
)
R
DS(
on
)
I
GSS
I
DSS
V
SD
tr
ton
tf
toff
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
Rise time
Turn-on time
Fall time
Turn-off time
CONDITIONS
V
GS
=0; I
D
= 1mA
V
DS
= V
GS
; I
D
=1mA
V
GS
=10V; I
D
= 15A
V
GS
=
±20V;V
DS
= 0
V
DS
=50V; V
GS
= 0
I
F
=25A; V
GS
=0
1.3
50
MIN
60
2.0
TYP
2SK600
MAX
UNIT
V
4.0
0.055
±100
1
1.7
75
115
110
330
V
Ω
nA
uA
V
ns
ns
ns
ns
V
GS
=10V;I
D
=3A;
R
L
=50Ω
75
80
240
isc website：www.iscsemi.cn
PDF pdfFactory Pro
2
isc & iscsemi is registered trademark
www.fineprint.cn
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