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BZX84B3V9

Description
Zener Diode, Case Style : SOT-23; Pd (W) : 0.225; Vz (V) Min: 3.82; Vz (V) Nom: 3.9; Vz (V) Max: 3.98; Vz @lzt (mA): 5; Leakage Current IR (uA): 3; Leakage Current VR (V): 1
CategoryDiscrete semiconductor    Zener diode   
File Size2MB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

BZX84B3V9 Overview

Zener Diode, Case Style : SOT-23; Pd (W) : 0.225; Vz (V) Min: 3.82; Vz (V) Nom: 3.9; Vz (V) Max: 3.98; Vz @lzt (mA): 5; Leakage Current IR (uA): 3; Leakage Current VR (V): 1

BZX84B3V9 Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
Manufacturer packaging codeSOT-23
BZX84B2V4-BZX84B51
Surface Mount Zener Diodes
B:2% tolerance
SOT-23
Features
Planar Die Construction.
350mw Power Dissipation.
Zener Voltages From 2.4V -51V
Ideally Suited For Automated Assembly Prcesses.
Applications
350Mw Surface mount zener diode
Dimensions in inches and (millimeters)
Ordering Information
Type No.
BZX84B2V4-BZX84B51
Marking
See Table on page2
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Power Dissipation
Symbol
P
d
Value
350
Unit
mW
Thermal Resistance, Junction to Ambient Air
R
θjA
357
℃/W
Operating and Storage Temperature Range
T
j,
T
stg
-65 to+150
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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