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1.5KE82

Description
Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size580KB,4 Pages
ManufacturerMDE Semiconductor
Websitehttp://www.mdesemiconductor.com
Download Datasheet Parametric Compare View All

1.5KE82 Overview

Transient Suppressor

1.5KE82 Parametric

Parameter NameAttribute value
MakerMDE Semiconductor
Reach Compliance Codeunknow
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1.5KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE- 6.8 TO 440 Volts
1500 Watt Peak Pulse Power 5.0 Watt Steady State
FEATURES
• Glass passivated junction
• 1500W Peak Pulse Power
capability on 10/1000 µs waveform
• Glass passivated junction
• Low zener impedance
• Excellent clamping capability
• Fast response time: typically less than
1.0 ps from 0 volts to BV min
• Typical IR less than 1µA above 10V
MECHANICAL DATA
The devices listed in this document take the
following physical form:
Diameter
Height
1.5KE TVS Cells: Assembled with 118mil Hex Die
Max. Height 65mil. Max. Dia 50mil
All dice are passivated either glass or
These cell TVS devices are specially designed for TVS
modules and hybrid circuit applications. The benefit
of this package is less space and easier assembly
Users should be cautioned that the assembled
modules must be properly protected to avoid the
glass or Si02 passivated die damage.
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 1.5KE6.8 thru types 1.5KE440 (e.g. 1.5KE6.8C, 1.5KE440CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL
VALUE
UNITS
Peak Pulse Power Dissipation on 10/1000 µs
Minimum 5000
Watts
P
ppm
waveform
(NOTE 1, Fig.1)
Ippm
SEE TABLE 1
Amps
Peak Pulse Current of on 10/1000 µs waveform
(Note 1,Fig 3)
Steady State Power Dissipation at
T
L
= 75°C
5.0
Watts
P
m(AV)
Lead lengths .375", 9.5mm
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
200
Amps
I
FSM
Superimposed on Rated Load,
(JEDEC Method)(Note 3)
Operatings and Storage Temperature Range
Tj, Tstg
-55 +175
°C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
8/6/2002

1.5KE82 Related Products

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Description Transient Suppressor Transient Suppressor Transient Suppressor Transient Suppressor Transient Suppressor Transient Suppressor Transient Suppressor Transient Suppressor
Maker MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
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