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AT49LV4096-20RC

Description
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
Categorystorage    storage   
File Size122KB,11 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

AT49LV4096-20RC Overview

4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

AT49LV4096-20RC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeSOIC
package instruction0.525 INCH, PLASTIC, SOIC-44
Contacts44
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time200 ns
startup blockBOTTOM
command user interfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.195 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level2
Number of functions1
Number of departments/size3,1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height2.77 mm
Department size8K,232K
Maximum standby current0.00005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width13.34 mm
Base Number Matches1
Features
Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 10
µs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 25 mA Active Current
- 50
µA
CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50
µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
AT49BV4096/LV4096
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
V
PP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase
Power Supply
Data
Inputs/Outputs
No Connect
VPP
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
48
46
44
42
40
38
36
34
32
30
28
26
25
47
45
43
41
39
37
35
33
31
29
27
NC
I/O15
I/O14
I/O13
I/O12
VCC
I/O3
I/O2
I/O1
I/O0
GND
A0
CE
A16
GND
I/O7
I/O6
I/O5
I/O4
I/O11
I/O10
I/O9
I/O8
OE
(continued)
SOIC (SOP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
TSOP Top View
Type 1
A15
A13
A11
A9
A14
A12
A10
4
6
8
10
12
14
16
18
20
22
24
1
3
5
7
9
11
13
15
17
19
21
23
2
A8
NC
NC
WE
RESET
VPP NC
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
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