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MT58L128V32FB-7.5IT

Description
Standard SRAM, 128KX32, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
Categorystorage    storage   
File Size384KB,23 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT58L128V32FB-7.5IT Overview

Standard SRAM, 128KX32, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

MT58L128V32FB-7.5IT Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time7.5 ns
JESD-30 codeR-PBGA-B119
JESD-609 codee1
length22 mm
memory density4194304 bi
Memory IC TypeSTANDARD SRAM
memory width32
Number of functions1
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX32
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH SYNCBURST SRAM
4Mb SYNCBURST
SRAM
FEATURES
MT58L256L18F, MT58L128L32F,
MT58L128L36F; MT58L256V18F,
MT58L128V32F, MT58L128V36F
3.3V V
DD
, 3.3V or 2.5V I/O, Flow-Through
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V or +2.5V isolated output buffer supply
(V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and
address pipelining
• Clock-controlled and registered addresses, data I/Os
and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-lead TQFP package for high density, high speed
• 119-bump BGA package
• Low capacitive bus loading
• x18, x32 and x36 versions available
100-Pin TQFP*
119-Bump BGA
OPTIONS
• Timing (Access/Cycle/MHz)
7.5ns/8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
• Configurations
3.3V I/O
256K x 18
128K x 32
128K x 36
2.5V I/O
256K x 18
128K x 32
128K x 36
MARKING
-7.5
-8.5
-10
MT58L256L18F
MT58L128L32F
MT58L128L36F
MT58L256V18F
MT58L128V32F
MT58L128V36F
*JEDEC-standard MS-026 BHA (LQFP).
GENERAL DESCRIPTION
The Micron
®
SyncBurst
SRAM family employs high-
speed, low-power CMOS designs that are fabricated using
an advanced CMOS process.
Micron’s 4Mb SyncBurst SRAMs integrate a 256K x 18,
128K x 32, or 128K x 36 SRAM core with advanced synchro-
nous peripheral circuitry and a 2-bit burst counter. All
synchronous inputs pass through registers controlled by a
positive-edge-triggered single clock input (CLK). The syn-
chronous inputs include all addresses, all data inputs,
active LOW chip enable (CE#), two additional chip enables
for easy depth expansion (CE2#, CE2), burst control inputs
• Package
100-pin TQFP
119-bump, 14mm x 22mm BGA
• Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
T
B
None
IT
• Part Number Example: MT58L256L18FT-8.5 IT
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F.p65 – Rev. 9/99
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
All registered and unregistered trademarks are the sole property of their respective companies.
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