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APTM120UM70D-A1N

Description
171A, 1200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MODULE-5
CategoryDiscrete semiconductor    The transistor   
File Size299KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

APTM120UM70D-A1N Overview

171A, 1200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MODULE-5

APTM120UM70D-A1N Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknow
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3200 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (ID)171 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)684 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
APTM120UM70D-AlN
Single switch
with Series diodes
MOSFET Power Module
SK
S
D
V
DSS
= 1200V
R
DSon
= 70mΩ max @ Tj = 25°C
I
D
= 171A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
G
DK
DK
S
D
SK
G
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
Max ratings
1200
171
126
684
±30
70
5000
24
50
3200
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120UM70D–AlN Rev 0
July, 2004

APTM120UM70D-A1N Related Products

APTM120UM70D-A1N
Description 171A, 1200V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, MODULE-5
Maker Microsemi
Parts packaging code MODULE
package instruction FLANGE MOUNT, R-XUFM-X5
Contacts 5
Reach Compliance Code unknow
Other features AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 3200 mJ
Shell connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1200 V
Maximum drain current (ID) 171 A
Maximum drain-source on-resistance 0.07 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XUFM-X5
Number of components 1
Number of terminals 5
Operating mode ENHANCEMENT MODE
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 684 A
Certification status Not Qualified
surface mount NO
Terminal form UNSPECIFIED
Terminal location UPPER
transistor applications SWITCHING
Transistor component materials SILICON
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