Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Maker | Microsemi |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | METALLURGICALLY BONDED |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.2 V |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 20 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 1 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 300 V |
| Maximum reverse recovery time | 0.05 µs |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| MES1105 | MES1106 | MES1104 | |
|---|---|---|---|
| Description | Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | compli | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Other features | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED |
| Shell connection | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.2 V | 1.2 V | 1.2 V |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 |
| Maximum non-repetitive peak forward current | 20 A | 20 A | 20 A |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| Maximum output current | 1 A | 1 A | 1 A |
| Package body material | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 300 V | 400 V | 200 V |
| Maximum reverse recovery time | 0.05 µs | 0.05 µs | 0.05 µs |
| surface mount | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL |
| Maker | Microsemi | - | Microsemi |