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MES1105

Description
Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size419KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

MES1105 Overview

Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon,

MES1105 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current20 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL

MES1105 Related Products

MES1105 MES1106 MES1104
Description Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code compli compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 20 A 20 A 20 A
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 300 V 400 V 200 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maker Microsemi - Microsemi
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