DRAM Module, 512KX4, 100ns, NMOS, SIMM-24
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Mitsubishi |
| Parts packaging code | SIMM |
| package instruction | , SIP24,.2 |
| Contacts | 24 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| access mode | PAGE |
| Maximum access time | 100 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | SEPARATE |
| JESD-30 code | R-XSMA-T24 |
| JESD-609 code | e0 |
| memory density | 2097152 bi |
| Memory IC Type | DRAM MODULE |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 24 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 512KX4 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| Encapsulate equivalent code | SIP24,.2 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 256 |
| Maximum slew rate | 0.28 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | NMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |





| MH51204JA-10 | MH51204JA-12 | MH51204JA-15 | MH51204JA-85 | |
|---|---|---|---|---|
| Description | DRAM Module, 512KX4, 100ns, NMOS, SIMM-24 | DRAM Module, 512KX4, 120ns, NMOS, SIMM-24 | DRAM Module, 512KX4, 150ns, NMOS, SIMM-24 | DRAM Module, 512KX4, 85ns, NMOS, SIMM-24 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Mitsubishi | Mitsubishi | Mitsubishi | Mitsubishi |
| Parts packaging code | SIMM | SIMM | SIMM | SIMM |
| package instruction | , SIP24,.2 | , SIP24,.2 | , SIP24,.2 | , SIP24,.2 |
| Contacts | 24 | 24 | 24 | 24 |
| Reach Compliance Code | unknow | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | PAGE | PAGE | PAGE | PAGE |
| Maximum access time | 100 ns | 120 ns | 150 ns | 85 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-XSMA-T24 | R-XSMA-T24 | R-XSMA-T24 | R-XSMA-T24 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 2097152 bi | 2097152 bit | 2097152 bit | 2097152 bi |
| Memory IC Type | DRAM MODULE | DRAM MODULE | DRAM MODULE | DRAM MODULE |
| memory width | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 24 | 24 | 24 | 24 |
| word count | 524288 words | 524288 words | 524288 words | 524288 words |
| character code | 512000 | 512000 | 512000 | 512000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 512KX4 | 512KX4 | 512KX4 | 512KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Encapsulate equivalent code | SIP24,.2 | SIP24,.2 | SIP24,.2 | SIP24,.2 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 256 | 256 | 256 | 256 |
| Maximum slew rate | 0.28 mA | 0.26 mA | 0.24 mA | 0.3 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | NMOS | NMOS | NMOS | NMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |