0.5 – 6 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-21186
Features
• Low Noise Figure:
0.5 dB Typ. @ 2 GHz
• High Output Power:
19 dBm Typ. P
1dB
@ 2 GHz
• High MSG:
13.5 dB Typ. @ 2 GHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
30
Description
Hewlett–Packard’s ATF-21186 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
general purpose device is
designed for use in low noise
amplifiers, gain stages, driver
amplifiers, and oscillators
operating over the VHF, UHF, and
microwave frequency ranges.
High gain with two volt operation
makes this part attractive for low
voltage, battery operated systems.
The low noise figure is
appropriate for commercial
systems demanding good
sensitivity, such as GPS receiver
front-ends and MMDS television
receivers. The output power is
sufficient for use as the driver
stage in many hand-held
transceivers operating in the
900 MHz through 2.4 GHz bands,
including in cellular phones, PCN,
and ISM band spread spectrum
applications.
85 mil Plastic Surface
Mount Package
Pin Configuration
4
SOURCE
211
GATE
DRAIN
1
3
2
SOURCE
20
GAIN (dB)
MSG
MAG
10
S
21
0
0.1
1
FREQUENCY (GHz)
10
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 750 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
ATF-21186 Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 15 mA.
5-49
5965-8716E
ATF-21186 Absolute Maximum Ratings
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute Maximum
[1]
5
-4
-6
I
DSS
400
150
-65 to +150
Notes:
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. T
CASE
= 25
o
C (T
CASE
is defined to
be the temperature at the ends of
pins 2 and 4 where they contact the
circuit board).
3. Derate at 4.4 mW/
o
C for T
C
> 60
o
C.
Thermal Resistance
[2]
:
θ
jc
= 225°C/W
ATF-21186 Electrical Specifications, T
A
= 25
°
C
Symbol
NF
o
Parameters and Test Conditions
Optimum Noise Figure
V
DS
= 2 V, I
DS
= 15 mA
Associated Gain
V
DS
= 2 V, I
DS
= 15 mA
Power at 1 dB Gain Compression
V
DS
= 3 V, I
DS
= 70 mA
1 dB Compressed Gain
V
DS
= 3 V, I
DS
= 70 mA
Transconductance
Saturated Drain Current
Pinchoff Voltage
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1 mA
Units
dB
Min.
Typ.
0.4
0.5
0.6
12.0
dBm
14.2
12.6
9.1
19.0
19.0
18.0
18.0
14.0
8.5
70
80
-3.0
120
120
-1.5
200
-0.8
Max.
0.75
G
A
dB
P
1 dB
G
1 dB
dB
g
m
I
DSS
V
P
mS
mA
V
5-50
ATF-21186 Typical Performance, T
A
= 25
°
C
1.5
NF
O
GA
1.0
20
30
20
18
16
G
A
G
A
(dB)
2.0
1.5
1.0
NF
0.5
14
12
G
A
(dB)
30
30
0.5
10 mA
15 mA
20 mA
0
0.1
1
FREQUENCY (GHz)
10
NF (dB)
P
1 dB
(dBm)
NF
O
(dB)
10
G
1 dB
10
0
10
0
0
10
20
30
I
DS
(mA)
40
50
60
0
0.1
1
FREQUENCY (GHz)
0
10
Figure 1. ATF-21186 Optimum Noise
Figure and Associated Gain vs.
Frequency and I
DS
, V
DS
= 2 V.
Figure 2. ATF-21186 Optimum Noise
Figure and Associated Gain vs. I
DS
,
f = 2 GHz, V
DS
= 2 V.
Figure 3. ATF-21186 Power Output at
1 dB Compression and 1 dB
Compressed Gain vs. Frequency.
V
DS
= 3 V, I
DS
= 70 mA.
30
30
30
MSG
20
20
MSG
20
GAIN (dB)
GAIN (dB)
GAIN (dB)
MSG
S
21
MAG
10
MAG
S
21
10
S
21
MAG
10
0
0.1
1
FREQUENCY (GHz)
10
0
0.1
1
FREQUENCY (GHz)
10
0
0.1
1
FREQUENCY (GHz)
10
Figure 4. ATF-21186 Insertion Power
Gain, Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 10 mA.
Figure 5. ATF-21186 Insertion Power
Gain, Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 20 mA.
Figure 6. ATF-21186 Insertion Power
Gain, Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
V
DS
= 3 V, I
DS
= 70 mA.
5-51
G
1 dB
(dB)
20
P
1 dB
20
Embedded System
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