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8ETH03-1TRR

Description
8 A, 300 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size112KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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8ETH03-1TRR Overview

8 A, 300 V, SILICON, RECTIFIER DIODE, TO-262AA

8ETH03S/8ETH03-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
8ETH03S
8ETH03-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
Base
cathode
2
2
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
35 ns
8A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 155 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
300
8
100
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
Document Number: 93933
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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