8ETH03S/8ETH03-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
8ETH03S
8ETH03-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
Base
cathode
2
2
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
35 ns
8A
300 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 155 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
300
8
100
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
Document Number: 93933
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8ETH03S/8ETH03-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = - 50 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = - 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
-
27
40
2.2
5.3
30
106
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.45
-
0.2
2.0
0.07
-
MAX.
175
2.5
70
-
-
-
12
(10)
8ETH03S
8ETH03-1
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93933
Revision: 08-Sep-08
8ETH03S/8ETH03-1
Hyperfast Rectifier,
8 A FRED Pt
TM
100
1000
Vishay High Power Products
I
R
- Reverse Current (µA)
100
10
1
0.1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
0.01
0.001
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
.
10
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93933
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8ETH03S/8ETH03-1
Vishay High Power Products
180
Hyperfast Rectifier,
8 A FRED Pt
TM
100
Allowable Case Temperature (°C)
170
DC
150
Square
wave
(D = 0.50)
Rated
V
R
applied
t
rr
(ns)
160
I
F
= 8 A , T
J
= 125 °C
140
See note (1)
130
0
2
4
6
8
10
12
14
10
100
I
F
= 8 A , T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
10
1000
Average Power Loss (W)
8
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
I
F
= 8 A , T
J
= 125 °C
100
I
F
= 8 A , T
J
= 25 °C
4
2
DC
Q
rr
(nC)
12
6
0
0
2
4
6
8
10
10
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93933
Revision: 08-Sep-08
8ETH03S/8ETH03-1
Hyperfast Rectifier,
8 A FRED Pt
TM
V
R
= 200
V
Vishay High Power Products
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93933
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
