8ETH06S/8ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
8ETH06S
8ETH06-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
Base
cathode
2
• 175 °C operating junction temperature
2
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
18 ns
8A
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 144 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
8
90
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.3
0.3
55
17
8.0
MAX.
-
2.4
1.8
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
Document Number: 93934
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8ETH06S/8ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 8 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/µs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/µs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
20
25
40
2.4
4.8
25
120
33
12
220
MAX.
22
25
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.4
-
0.5
2.0
0.07
-
MAX.
175
2
70
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
8ETH06S
8ETH06-1
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93934
Revision: 08-Sep-08
8ETH06S/8ETH06-1
Hyperfast Rectifier,
8 A FRED Pt
TM
100
1000
Vishay High Power Products
I
R
- Reverse Current (µA)
100
10
1
0.1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0.01
0.001
0.1
0
1
2
3
4
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
.
1
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93934
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8ETH06S/8ETH06-1
Vishay High Power Products
180
Hyperfast Rectifier,
8 A FRED Pt
TM
60
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
170
160
150
140
130
See note (1)
120
0
2
4
6
8
10
12
Square
wave
(D = 0.50)
Rated
V
R
applied
50
t
rr
(ns)
DC
40
30
20
I
F
= 16 A
I
F
= 8 A
1000
10
100
I
F(AV) -
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
20
18
400
350
RMS limit
300
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
Average Power Loss (W)
16
14
10
8
6
4
2
0
0
2
4
6
8
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
12
250
200
150
100
50
0
10
12
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
´
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93934
Revision: 08-Sep-08
8ETH06S/8ETH06-1
Hyperfast Rectifier,
8 A FRED Pt
TM
V
R
= 200
V
Vishay High Power Products
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93934
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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