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8ETH06STRRPBF

Description
8 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size176KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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8ETH06STRRPBF Overview

8 A, 600 V, SILICON, RECTIFIER DIODE

8ETH06STRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-263
package instructionROHS COMPLIANT, D2PAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationHYPER FAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.025 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-8ETH06SPbF, VS-8ETH06-1PbF
Vishay High Power Products
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
VS-8ETH06SPbF
VS-8ETH06-1PbF
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Base
cathode
2
2
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
18 ns
8A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 144 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
8
90
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.3
0.3
55
17
8.0
MAX.
-
2.4
1.8
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94027
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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Description 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
Diode type RECTIFIER DIODE rectifier diode RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 90 A 90 A 90 A 90 A 90 A 90 A 90 A
Number of components 1 1 1 1 1 1 1
Maximum repetitive peak reverse voltage 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Maximum reverse recovery time 0.025 µs 0.0250 us 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to
Maker Vishay - Vishay Vishay Vishay Vishay Vishay
Parts packaging code TO-263 - TO-262AA - - TO-263 TO-263
package instruction ROHS COMPLIANT, D2PAK-3 - ROHS COMPLIANT, TO-262, 3 PIN - - ROHS COMPLIANT, D2PAK-3 ROHS COMPLIANT, D2PAK-3
Contacts 3 - 3 - - 3 3
Reach Compliance Code unknown - unknow unknow unknow unknown unknown
ECCN code EAR99 - EAR99 EAR99 EAR99 - -
Other features LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT - - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application HYPER FAST RECOVERY HYPER FAST RECOVERY HYPER FAST RECOVERY - - HYPER FAST RECOVERY HYPER FAST RECOVERY
Shell connection CATHODE CATHODE CATHODE - - CATHODE CATHODE
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON silicon SILICON - - SILICON SILICON
Maximum forward voltage (VF) 1.8 V - 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
JESD-30 code R-PSSO-G2 - R-PSIP-T3 - - R-PSSO-G2 R-PSSO-G2
Phase 1 1 1 - - 1 1
Number of terminals 2 3 3 - - 2 2
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C - -65 °C - - -65 °C -65 °C
Maximum output current 8 A - 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - IN-LINE - - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - Not Qualified - - Not Qualified Not Qualified
surface mount YES - NO NO NO YES YES
Terminal form GULL WING THROUGH-hole THROUGH-HOLE - - GULL WING GULL WING
Terminal location SINGLE single SINGLE - - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 - 1 1 1 1 1
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