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8ETX06FPPBF

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
CategoryDiscrete semiconductor    diode   
File Size116KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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8ETX06FPPBF Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220

8ETX06FPPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts2
Reach Compliance Codecompli
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, UL RECOGNIZED
applicationHYPERFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.024 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
8ETX06PbF/8ETX06FPPbF
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
8ETX06PbF
8ETX06FPPbF
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
Base
cathode
2
1
Cathode
3
Anode
1
Cathode
3
Anode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TO-220AC
TO-220 FULL-PAK
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
15 ns
8A
600 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
C
= 106 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
110
18
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94032
Revision: 08-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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