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8S2TH06FP

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    diode   
File Size125KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

8S2TH06FP Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

8S2TH06FP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time19 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
New Product
8S2TH06FP
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
1
2
RoHS
COMPLIANT
• Designed and qualified for industrial level
2L TO-220 FULL-PAK
DESCRIPTION
8S2TH06FP 600 V series are the state of the art
tandem hyperfast recovery rectifiers: excellent switching
performance and extremely low forward voltage drop trade
off is overcome, boosting overall application performance.
Specially designed for CCM PFC application, these devices
show incomparable performance in every current intensive
hard switching application.
Optimized reverse recovery stored charge enables
downsizing of boosting switch and cooling system, increased
operating frequency make possible use of smaller reactive
elements. Cost effective PFC application is then possible
with high efficiency over wide input voltage range and
loading factor.
Plastic insulated package features easy mounting together
with not insulated parts.
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
19 ns
8A
600 V
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES
PARAMETER
Repetitive peak reverse voltage
DC forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F
I
FSM
T
J
, T
Stg
50 % duty cycle, rect. waveforms, T
C
= 93 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
8
100
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 µA
I
F
= 8 A
Forward voltage
I
F
= 8 A, T
J
= 125 °C
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
Reverse leakage current
I
R
C
T
T
J
= 125 °C, V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
Junction capacitance
V
R
= 600 V
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
2.1
1.7
1.6
<1
7
27
12
MAX.
-
2.4
2
1.8
10
80
100
-
pF
µA
V
UNITS
Document Number: 94553
Revision: 08-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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