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312

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size58KB,1 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
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312 Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,

312 Parametric

Parameter NameAttribute value
MakerNTE
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)1 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

312 Related Products

312 451
Description Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,
Maker NTE NTE
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow unknow
Configuration SINGLE SINGLE
FET technology JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 1 pF 1 pF
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON

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