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935296952115

Description
100A, 40V, 0.0018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, POWER-SO8, LFPAK-4
CategoryDiscrete semiconductor    The transistor   
File Size233KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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935296952115 Overview

100A, 40V, 0.0018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, POWER-SO8, LFPAK-4

935296952115 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)391 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1304 A
GuidelineIEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN1R6-40YLC
22 August 2012
N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using
NextPower technology
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 150°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
Conditions
25 °C ≤ T
j
≤ 150 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
[1]
Min
-
-
-
-55
Typ
-
-
-
-
Max
40
100
288
150
Unit
V
A
W
°C
Static characteristics
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 20 V;
Fig. 14
-
15.3
-
nC
-
1.25
1.55
-
1.45
1.8
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