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HYB18T512160AC-5

Description
DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84
Categorystorage    storage   
File Size2MB,96 Pages
ManufacturerQIMONDA
Download Datasheet Parametric Compare View All

HYB18T512160AC-5 Overview

DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84

HYB18T512160AC-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQIMONDA
package instructionFBGA, BGA84,9X15,32
Reach Compliance Codeunknow
Maximum access time0.6 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B84
JESD-609 codee0
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width16
Number of terminals84
word count33554432 words
character code32000000
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA84,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length4,8
Maximum standby current0.004 A
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
D a t a S h e e t , Rev. 1.13, M a i 2 00 4
HYB18T512[400/800/160]AC–[3.7/5]
HYB18T512[400/800/160]AF–[3.7/5]
512-Mbit Double-Data-Rate-Two SDRAM
DDR2 SDRAM
M e m or y P r o du c t s
N e v e r
s t o p
t h i n k i n g .

HYB18T512160AC-5 Related Products

HYB18T512160AC-5 HYB18T512800AC-3.7 HYB18T512400AC-5
Description DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84 DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60 DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60
Is it Rohs certified? incompatible incompatible incompatible
Maker QIMONDA QIMONDA QIMONDA
package instruction FBGA, BGA84,9X15,32 FBGA, BGA60,9X11,32 FBGA, BGA60,9X11,32
Reach Compliance Code unknow unknown unknown
Maximum access time 0.6 ns 0.5 ns 0.6 ns
Maximum clock frequency (fCLK) 200 MHz 267 MHz 200 MHz
I/O type COMMON COMMON COMMON
interleaved burst length 4,8 4,8 4,8
JESD-30 code R-PBGA-B84 R-PBGA-B60 R-PBGA-B60
JESD-609 code e0 e0 e0
memory density 536870912 bi 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
memory width 16 8 4
Number of terminals 84 60 60
word count 33554432 words 67108864 words 134217728 words
character code 32000000 64000000 128000000
organize 32MX16 64MX8 128MX4
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA FBGA
Encapsulate equivalent code BGA84,9X15,32 BGA60,9X11,32 BGA60,9X11,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
power supply 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192
Continuous burst length 4,8 4,8 4,8
Maximum standby current 0.004 A 0.004 A 0.004 A
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM
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