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1N5810

Description
Diode Switching 8A 2-Pin GPR-4AM
CategoryDiscrete semiconductor    diode   
File Size80KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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1N5810 Overview

Diode Switching 8A 2-Pin GPR-4AM

1N5810 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Base Number Matches1
U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
U.SA
1N5807-1N5811
PRV: 50-150 Volts
lo : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ultrafast recovery time
' Pb / RoHS Free
MECHANICAL DATA:
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight: 0.645 gram
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
ULTRAFAST RECOVERY
RECTIFIER DIODES
1.00(25.4)
0.161 (4.1)
0.154 (3.9)
MIN.
0.284 (7.2)
0.268 (6.8)
0.040(1.02)
0.0385 (0.98)
1.00(25.4)
MIN.
Dimensions in inches and ( millimeters )
CHARACTERISTICS
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100pA
Maximum Average Forward Current
SYMBOL
VRWM
V
B
R(Min)
lp/A\
1N5807
50
60
1N5809
100
110
6.0
(1
>
1N5811
150
160
UNIT
V
V
A
A
V
MA
ns
3.0
(2)
Maximum Forward Surge Current
(3)
Maximum Peak Forward Voltage at
\ =
4.0 A.
Maximum Reverse Current at V
RW
w
Maximum Reverse Recovery Time
<4)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
Notes :
'FSM
V
F
125
0.875
Ta = 25 °C
Ta = 100 °C
IR
|R<H)
5.0
150
Trr
30
RQJL
Tj
22
-65 to + 175
"C/W
°C
TSTG
-65 to +175
°c
(1) Rated at T
L
=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for T
L
above 75
3
C.
(2) Derate linearly at 25 mATC above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where T
J(rnax)
dose not exceed 175 °C.
(3) Ta = 25 °C @ I
F(AV)
= 3A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
(4) I
F
= 1A, I
R M
= 1A, l
R
(R
E
c) = °-
1
A and di/dt= 10 A/us min.
N.I Semi-Conductors reserves the right to change test conditions parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I
Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors entourages
customers to verity that datasheets are current before placing orders.

1N5810 Related Products

1N5810 1N5811US 1N5809US
Description Diode Switching 8A 2-Pin GPR-4AM Diode Switching 150V 6A 2-Pin SMD Diode Switching 100V 6A 2-Pin SMD
Reach Compliance Code unknow unknow unknown
Maker New Jersey Semiconductor - New Jersey Semiconductor
Base Number Matches 1 1 -
Seal~
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