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FR104-E

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size25KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
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FR104-E Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,

FR104-E Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FR101
THRU
FR107
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
Fast switching
Low leakage
Low forward voltage drop
High current capability
High surge capability
High reliability
DO-41
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.33 gram
1.0 (25.4)
MIN.
.034 (0.9)
DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
.107 (2.7)
.080 (2.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
FR101 FR102 FR103 FR104 FR105 FR105P FR106 FR107 FR107P UNITS
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
1.0
30
15
-55 to + 150
600
400
600
800
560
800
1000
700
1000
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Full Cycle
Average, .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
FR101 FR102 FR103 FR104 FR105 FR105P FR106 FR107 FR107P UNITS
1.3
Volts
5.0
I
R
100
trr
150
250
150
500
250
uAmps
nSec
2002-11
uAmps
o

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FR104-E FR102-B FR101-B FR105P-T FR105P-B FR107P-T FR107P-B FR105-F
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41,
Reach Compliance Code compli not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 100 V 50 V 600 V 600 V 1000 V 1000 V 600 V
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.25 µs 0.25 µs
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
package instruction O-PALF-W2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Minimum operating temperature -65 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -
Is it lead-free? - Lead free Lead free Lead free Lead free Lead free Lead free -
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to -
Parts packaging code - DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 -
Contacts - 2 2 2 2 2 2 -
Other features - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
JESD-609 code - e3 e3 e3 e3 e3 e3 -
Peak Reflow Temperature (Celsius) - 265 265 265 265 265 265 -
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Base Number Matches - 1 1 1 1 1 1 1
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