HM5-6564-2 datasheet, PDF - EEWORLD Datasheet

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HM5-6564-2: DescriptionHM5-6564-2; Categorystorage storage; File Size442KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HM5-6564-2 Overview

HM5-6564-2

HM5-6564-2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	_compli
Maximum access time	400 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T40
JESD-609 code	e0
memory density	65536 bi
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	40
word count	8192 words
character code	8000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.9
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0004 A
Minimum standby current	2 V
Maximum slew rate	0.056 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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HM5-6564-2 Related Products

	HM5-6564-2	5962-01-178-2798	HM5-6564-5	HM5-6564-9
Description	HM5-6564-2	MEMORY MODULE,SYNC SRAM,8KX8,CMOS,DIP,40PIN,CERAMIC	HM5-6564-5	HM5-6564-9
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	_compli	_compli	_compli
Maximum access time	400 ns	400 ns	500 ns	400 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDIP-T40	R-XDIP-T40	R-XDIP-T40	R-XDIP-T40
memory density	65536 bi	65536 bi	65536 bi	65536 bi
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8
Number of terminals	40	40	40	40
word count	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	70 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-	-40 °C
organize	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP40,.9	DIP40,.9	DIP40,.9	DIP40,.9
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.0004 A	0.0004 A	0.0036 A	0.0004 A
Minimum standby current	2 V	2 V	2 V	2 V
Maximum slew rate	0.056 mA	0.056 mA	0.06 mA	0.056 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	COMMERCIAL	INDUSTRIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation	Renesas Electronics Corporation
JESD-609 code	e0	-	e0	e0
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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