D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
®
ISL6612B, ISL6613B
Data Sheet
July 27, 2006
FN9205.3
Advanced Synchronous Rectified Buck
MOSFET Drivers with Pre-POR OVP
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Low VCC Rising Threshold (7V) for IBA Applications.
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel
®
and AMD
®
Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6612B, ISL6613B
Ordering Information
PART NUMBER
ISL6612BCB
ISL6612BCB-T
ISL6612BCBZ (Note)
ISL6612BCBZ-T (Note)
ISL6612BCR
ISL6612BCR-T
ISL6612BCRZ (Note)
ISL6612BCRZ-T (Note)
ISL6612BECB
ISL6612BECB-T
ISL6612BECBZ (Note)
ISL6612BECBZ-T (Note)
ISL6612BEIB
ISL6612BEIB-T
ISL6612BEIBZ (Note)
ISL6612BEIBZ-T (Note)
ISL6612BIB
ISL6612BIB-T
ISL6612BIBZ (Note)
ISL6612BIBZ-T (Note)
ISL6612BIR
ISL6612BIR-T
ISL6612BIRZ (Note)
ISL6612BIRZ-T (Note)
ISL6613BCB
ISL6613BCB-T
ISL6613BCBZ (Note)
ISL6613BCBZ-T (Note)
ISL6613BCR
ISL6613BCR-T
ISL6613BCRZ (Note)
ISL6613BCRZ-T (Note)
ISL6613BECB
ISL6613BECB-T
ISL6613BECBZ (Note)
ISL6613BECBZ-T (Note)
ISL6613BEIB
ISL6613BEIB-T
ISL6613BEIBZ (Note)
ISL6613BEIBZ-T (Note)
PART MARKING
6612BCB
6612BCB
6612BCBZ
6612BCBZ
12BC
12BC
12BZ
12BZ
6612BECB
6612BECB
6612BECBZ
6612BECBZ
6612BEIB
6612BEIB
6612BEIBZ
6612BEIBZ
6612BIB
6612BIB
6612BIBZ
6612BIBZ
12BI
12BI
2BIZ
2BIZ
6613BCB
6613BCB
6613BCBZ
6613BCBZ
13BC
13BC
13BZ
13BZ
6613BECB
6613BECB
6613BECBZ
6613BECBZ
6613BEIB
6613BEIB
6613BEIBZ
6613BEIBZ
TEMP.
RANGE (°C)
0 to 85
8 Ld SOIC Tape and Reel
0 to 85
8 Ld SOIC (Pb-free)
M8.15
PACKAGE
8 Ld SOIC
M8.15
PKG.
DWG. #
8 Ld SOIC Tape and Reel (Pb-free)
0 to 85
10 Ld 3x3 DFN Tape and Reel
0 to 85
10 Ld 3x3 DFN (Pb-free)
L10.3x3
10 Ld 3x3 DFN
L10.3x3
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld EPSOIC Tape and Reel
0 to 85
8 Ld EPSOIC (Pb-free)
M8.15B
8 Ld EPSOIC
M8.15B
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld EPSOIC Tape and Reel
-40°C to 85°C
8 Ld EPSOIC (Pb-free)
M8.15B
8 Ld EPSOIC
M8.15B
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld SOIC Tape and Reel
-40°C to 85°C
8 Ld SOIC (Pb-free)
M8.15
8 Ld SOIC
M8.15
8 Ld SOIC Tape and Reel (Pb-free)
-40°C to 85°C
10 Ld 3x3 DFN Tape and Reel
-40°C to 85°C
10 Ld 3x3 DFN (Pb-free)
L10.3x3
10 Ld 3x3 DFN
L10.3x3
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld SOIC Tape and Reel
0 to 85
8 Ld SOIC (Pb-free)
M8.15
8 Ld SOIC
M8.15
8 Ld SOIC Tape and Reel (Pb-free)
0 to 85
10 Ld 3x3 DFN Tape and Reel
0 to 85
10 Ld 3x3 DFN (Pb-free)
L10.3x3
10 Ld 3x3 DFN
L10.3x3
10 Ld 3x3 DFN Tape and Reel (Pb-free)
0 to 85
8 Ld EPSOIC Tape and Reel
0 to 85
8 Ld EPSOIC (Pb-free)
M8.15B
8 Ld EPSOIC
M8.15B
8 Ld EPSOIC Tape and Reel (Pb-free)
-40°C to 85°C
8 Ld EPSOIC Tape and Reel
-40°C to 85°C
8 Ld EPSOIC (Pb-free)
M8.15B
8 Ld EPSOIC
M8.15B
8 Ld EPSOIC Tape and Reel (Pb-free)
2
FN9205.3
July 27, 2006
ISL6612B, ISL6613B
Ordering Information
(Continued)
PART NUMBER
ISL6613BIB
ISL6613BIB-T
ISL6613BIBZ (Note)
ISL6613BIBZ-T (Note)
ISL6613BIR
ISL6613BIR-T
ISL6613BIRZ (Note)
ISL6613BIRZ-T (Note)
PART MARKING
6613BIB
6613BIB
6613BIBZ
6613BIBZ
13BI
13BI
3BIZ
3BIZ
TEMP.
RANGE (°C)
-40°C to 85°C
8 Ld SOIC Tape and Reel
-40°C to 85°C
8 Ld SOIC (Pb-free)
M8.15
PACKAGE
8 Ld SOIC
M8.15
PKG.
DWG. #
8 Ld SOIC Tape and Reel (Pb-free)
-40°C to 85°C
10 Ld 3x3 DFN Tape and Reel
-40°C to 85°C
10 Ld 3x3 DFN (Pb-free)
L10.3x3
10 Ld 3x3 DFN
L10.3x3
10 Ld 3x3 DFN Tape and Reel (Pb-free)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Contact the factory for availability.
Pinouts
ISL6612BCB, ISL6613BCB (SOIC)
ISL6612BECB, ISL6613BECB (EPSOIC)
TOP VIEW
UGATE
BOOT
PWM
GND
1
2
3
4
GND
8
7
6
5
PHASE
PVCC
VCC
LGATE
ISL6612BCR, ISL6613BCR (10L 3x3 DFN)
TOP VIEW
UGATE
BOOT
N/C
PWM
GND
1
2
3
4
5
GND
10 PHASE
9 PVCC
8
7
N/C
VCC
6 LGATE
Block Diagram
ISL6612B AND ISL6613B
UVCC
VCC
+5V
10K
PWM
POR/
CONTROL
8K
LOGIC
PRE-POR OVP
FEATURES
BOOT
UGATE
PHASE
(LVCC)
PVCC
UVCC = VCC FOR ISL6612B
UVCC = PVCC FOR ISL6613B
LGATE
SHOOT-
THROUGH
PROTECTION
GND
PAD
FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
3
FN9205.3
July 27, 2006