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DTA043XUBTL

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3F, SC-85, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size855KB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTA043XUBTL Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3F, SC-85, 3 PIN

DTA043XUBTL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 2.1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)35
JESD-30 codeR-PDSO-F3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTA043X series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
l
Outline
Parameter
V
CC
I
C(MAX.)
R
1
R
2
Value
-50V
-100mA
4.7kΩ
10kΩ
VMT3
EMT3F
 
DTA043XM
(SC-105AA)
UMT3F
 
DTA043XEB
(SC-89)
     
               
l
Features
1) Built-In Biasing Resistors, R
1
= 4.7kΩ,
 
R
2
= 10kΩ
2) Built-in bias resistors enable the configuration of
 
an inverter circuit without connecting external
 
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
 
with complete isolation to allow negative biasing
 
of the input. They also have the advantage of
 
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
 
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC043X series
6) Lead Free/RoHS Compliant.
 
DTA043XUB
(SC-85)
     
               
 
 
 
 
 
l
Inner circuit
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
                                           
Part No.
DTA043XM
DTA043XEB
DTA043XUB
Package
Package
size
VMT3
EMT3F
UMT3F
1212
1616
2021
Taping
code
T2L
TL
TL
Reel size Tape width
(mm)
(mm)
180
180
180
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
Marking
58
58
58
                                                                                         
www.rohm.com
©
2012 ROHM Co., Ltd. All rights reserved.
1/7
20130117 - Rev.001

DTA043XUBTL Related Products

DTA043XUBTL DTA043XEBTL DTA043XMT2L
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3F, SC-85, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, EMT3F, SC-89, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, VMT3, SC-105AA, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 2.1 BUILT IN BIAS RESISTANCE RATIO IS 2.1 BUILT IN BIAS RESISTANCE RATIO IS 2.1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 35 35 35
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
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