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BDT60

Description
4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size194KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDT60 Overview

4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 750(Min)@ I
C
= -
1.5A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -60V(Min)- BDT60; -80V(Min)- BDT60A;
-100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement
to Type BDT61/A/B/C
APPLICATIONS
·Designed
for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
)
SYMBOL
PARAMETER
BDT60
Collector-Base
Voltage
BDT60A
BDT60B
BDT60C
BDT60
Collector-Emitter
Voltage
BDT60A
BDT60B
BDT60C
V
EBO
I
C
I
B
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
VALUE
-60
-80
V
-100
-120
-60
-80
V
-100
-120
-5
-4
-0.1
2
W
50
150
-65~150
V
A
A
UNIT
BDT60/A/B/C
V
CBO
V
CEO
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2.5
62.5
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1

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