BDT60B datasheet, PDF - EEWORLD Datasheet

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BDT60B: Description4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220; Categorysemiconductor Discrete semiconductor; File Size194KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Darlington Power Transistors

DESCRIPTION

·DC

Current Gain -h

FE

= 750(Min)@ I

C

= -

1.5A

·Collector-Emitter

Sustaining Voltage-

: V

CEO(SUS)

= -60V(Min)- BDT60; -80V(Min)- BDT60A;

-100V(Min)- BDT60B; -120V(Min)- BDT60C

·Complement

to Type BDT61/A/B/C

APPLICATIONS

·Designed

for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃

)

SYMBOL

PARAMETER

BDT60

Collector-Base

Voltage

BDT60A

BDT60B

BDT60C

BDT60

Collector-Emitter

Voltage

BDT60A

BDT60B

BDT60C

V

EBO

I

C

I

B

Emitter-Base Voltage

Collector Current-Continuous

Base Current

Collector Power Dissipation

T

a

=25℃

Collector Power Dissipation

T

C

=25℃

Junction Temperature

Storage Ttemperature Range

VALUE

-60

-80

V

-100

-120

-60

-80

V

-100

-120

-5

-4

-0.1

2

W

50

150

-65~150

℃

V

A

UNIT

BDT60/A/B/C

V

CBO

V

CEO

P

C

T

j

T

stg

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

R

th j-c

PARAMETER

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

2.5

62.5

UNIT

℃/W

isc website：www.iscsemi.cn

1

BDT60B Related Products

	BDT60B	BDT60C	BDT60	BDT60A
Description	4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220	4 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220	4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220	4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220

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