INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY20
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain
-h
FE
=20-70@I
C
= 4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.1V(Max)@ I
C
= 4A
APPLICATIONS
·Designed
for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
100
60
7
15
7
115
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE(
on
)
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
I
s/b
f
T
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
CONDITIONS
I
C
=200mA ; I
B
=0
I
C
= 4A; I
B
= 0.4A
I
C
= 10A; I
B
= 3.3A
I
C
= 4A; V
CE
= 4V
V
CE
= 30V; I
B
=0
V
CE
= 100V; V
BE(off)
= 1.5V
V
CE
= 100V; V
BE(off)
= 1.5V,T
C
=150℃
V
EB
= 7.0V; I
C
=0
I
C
= 4A ; V
CE
= 4V
I
C
= 10A ; V
CE
= 4V
V
CE
= 40V,t= 1.0s,Nonrepetitive
I
C
= 0.5A ; V
CE
= 10V
20
5
2.87
1
MIN
60
BDY20
MAX
UNIT
V
1.1
3.0
1.5
0.7
1.0
5.0
5.0
70
V
V
V
mA
mA
mA
A
MHz
isc website：www.iscsemi.cn
2
Embedded System
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